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| SII300N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Symbol Conditions TC = 25oC, unless otherwise specified Values 1200 625(300) 600 2500 _ +20 1200 300 600 19000 2500 Units V A A W V V A A IGBT Wechselrichter/ IGBT Inverter VCES IC TC= 25(80)oC, Tvj= 150oC ICRM TC= 80oC, tP =1ms Ptot TC= 25oC, Tvj= 150oC VGES Diode Wechselrichter/ Diode Inverter VRRM IF IFRM tP =1ms VR=0V, tP =10ms; TVj=125oC I2t Module Isolation/ Module Isolation VISOL RMS, f=50Hz, t=1min, NTC connect to Baseplate As V 2 Sirectifier R SII300N12 NPT IGBT Modules Characteristics Symbol Conditions IGBT Wechselrichter/ IGBT Inverter VGEth VGE = VCE, IC =12mA ICES VGE = 0; VCE = 1200V IGES VCE=0; VGE=20V RGint VCE(sat) IC =300A; VGE = 15V; Tj = 25(125)oC Cies Cres QG Isc TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 max. 6.5 5 400 2.6(2.9) Units V mA nA V nF uC A 1.0 2.1(2.4) 21 1.4 3.2 1800 under following conditions VGE = 0, VCE = 25V, f = 1MHz VGE = -15V...+15V o tP 10uS, VGE 15V, Tvj = 125 C , Vcc = 900V under following conditions: VCE = 600V, IC = 300A RGon = RGoff =3.3 , , Tj = 25(125)oC VGE = 15V td(on) tr td(off) tf Eon(Eoff) 110(120) 60(70) 550(570) 70(80) 35(36) 0.05 0.03 ns ns ns ns mJ K/W Tj = 25(125)oC, LS = 60nH RthJC RthCH Diode Wechselrichter/ Diode Inverter under following condition VF IF = 300A; VGE = 0V; Tj = 25(125)oC IRM IF = 300A; Tj = 25(125)oC Qr -di/dt = 5400A/us Erec VGE = -15V, VR=600V RthJC RthCH Modul/ module under following conditions IC = 15A; VGE = 15V; Tj = 25(125)oC RthCH VCE=VGE, IC=0.5mA LsCE f=1MHz, VCE=25V, VGE=0V RCC'+EE' TVJ TVJM Tstg Mechanical Data Ms to heatsink M6 Mt to terminals M5 w 1.8(1.7) 2.3(2.2) 350(420) 28(58) 9(21) 0.125 0.06 V A uC mJ K/W 5.0 1.7(2.0) 5.8 1.1 -40...+125 150 -40...+125 2.15 6.5 V V nF o C 3 2.5 5 5 325 Nm Nm g Sirectifier R SII300N12 NPT IGBT Modules Sirectifier R SII300N12 NPT IGBT Modules Sirectifier R SII300N12 NPT IGBT Modules Sirectifier R |
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